Capacity – 512GB
Form Factor – M.2 2280
Interface – PCIe Gen3x4
Speed – 512GB sequential read up to 3500MB/s read, sequential write up to 2000MB/s1
IOPS: up to 332/275K
NAND flash – 3D TLC
Operating Temperature – 0° to 70° C
Storage Temperature – -40° C to 85° C
Shock Resistant – 1500G, duration 0.5ms, Half Sine Wave
Vibration Resistant – 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)
TBW – 512GB: 300TB
DWPD – 512GB: 0.32
MTBF – 1,500,000 Hours
Dimension (L x W x H) – 80 x 22 x 2.25 mm / 3.15” x 0.87” x 0.09”
Weight – 9g
